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Preferred device complementary silicon power transistors. • dc current gain − hfe = 20− 70 @ ic = 4 adc. part # : 2n3055. 4a 1. 2n3055 product details. file size: 47kbytes. the 2n3055 is a silicon epitaxial- base planar npn transistor mounted in jedec to- 3 metal case.
2n3055 power transistor ( npn) www. complementary silicon power transistors are designed for general− purpose switching and amplifier applications. internal schematic diagram august 1999. other lead finish options available. taitroncomponents. silicon npn power transistors 2n3055 description 2n3055 pdf · with to- 3 package · complement to type mj2955 · dc current gain - h fe = 20– 70 @ i c = 4 adc · collector– emitter saturation voltage - v ce( sat) = 1. . 2n3055 pre- tinned 63% tin, 37% lead ld( ii) notes: i. com page 2 of 4 electrical characteristics ( t ambient = 25ºc unless noted otherwise) symbol description min.
power derating * for additional information on our pb− free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/ d. . features: dc current gain: hfe = 20 − 70 @ ic = 4a collector− emitter saturation voltage: vce( sat) = 1. powerbase complementary transistors designed for high power audio, stepping motor and other linear applications. download the pdf file of the sgs- thomson 2n3055 silicon npn transistor datasheet, a 2n3055 pdf preferred salestype for power switching circuits, series and shunt regulators, output stages and high fidelity amplifiers. .
2n3055 product details. 3a 3. features dc current gain − hfe = 20− 70 @ ic = 4 adc collector− emitter saturation voltage − vce( sat) = 1. manufacturer: stmicroelectronics. iscsiliconnpnpowertransistors 2n3055 electricalcharacteristics tc= 25℃ unlessotherwisespecified symbol parameter conditions min max unit vceo( sus) collector- emittersustainingvoltage ic= 30ma; ib= 0 60 v v ce( sat) - 1 collector- emittersaturationvoltage i = 4a; ib= 2n3055 pdf 0.
. • current- gain — bandwidth- product @ ig = 1. . 0 v. unit conditions v ceo( sus) * collector- emitter sustaing voltage 60 v ic= 200ma, ib= 0 v cer( sus) * collector- emitter sustaing voltage 70 v ic= 200ma, rbe= 100ω h fe * d.
0 adc ft = 0. . it is an npn ( negative- positive- negative) transistor with a maximum collector current of 15 amps and a maximum 2n3055 pdf collector- emitter pdf voltage of 60 volts. features. the transistor is particularly suitable for use in powerful af output stages and in stabilized power supply units.
15 ampere complementary silicon power transistors 60, 120 volts 115, 180 watts. description: complementary silicon power transistors. 2n3055 product details. 8 mhz ( min) - npn = 2, 2 mhz ( min) - pnp • safe operating area — rated to 60 v and 120 v, respectively ' maximum ratings npn 2n3055a mj15015 mj2955a pnp mj15016 rating collector- emitter voltage collector- base voltage.
download. 2 n 3055 is a single diffused npn silicon transistor in to 3 case ( 3 a 2). 1v ( max) @ ic = 4a excellent safe operating area absolute maximum ratings: . com 15 ampere power transistors complementary silicon 60 volts, 115 watts to− 204aa ( to− 3) case 1− 07 style 1 marking diagram xxxx55g. • collector− emitter saturation voltage − vce ( sat) = 1. the collector is electrically connected to the case. 2n3055 npn mj2955 pnp complementary silicon power transistors description: the central semiconductor 2n3055 and mj2955 are complementary silicon power transistors manufactured by the epitaxial base process, mounted in a hermetically sealed metal case, designed for general purpose switching and amplifier applications. the datasheet provides the internal schematic diagram, absolute maximum ratings, thermal data, electrical characteristics, mechanical data and more.
specify lead finish requirements at point of order. 2n3055 is a bipolar junction transistor ( bjt) that is widely used as a power transistor in various electronic circuits. ii. [ 3] [ 4] [ 5] . . download the pdf datasheet for 2n3055ag, mj15015g, mj15016g, three types of complementary silicon high- power transistors with different collector voltages and currents. . marking: full part number. it was introduced in the early 1960s by rca using a hometaxial power transistor process, transitioned to an epitaxial base in the mid- 1970s. to- 3 ( to- 204aa) metal package underside view pin 1 - base pin 2 - emitter case - collector.
it is intended for power switching circuits, series and shunt regulators, output stages and high fidelity amplifiers. download. . max. designed for general− purpose switching and amplifier applications. 15 ampere power transistors complementary silicon 60 volts, 115 watts.
the complementary pnp type is mj2955. these devices can also be used in power switching circuits such pdf as relay or solenoid drivers, dc– to– dc converters. see the maximum ratings, thermal characteristics, ordering information, and electrical characteristics of these devices. 1 vdc ( max) @ i c = 4 adc · excellent safe operating area applications · designed for general– purpose switching and amplifier applications. page: 3 pages. [ 2] it is a transistor type of enduring popularity. the 2n3055 is a silicon npn transistor in a to3 type case designed for general purpose switching and amplifier applications.
file size: 167kbytes. description: power transistors( 15a, 50v, 115w). 2n3055 datasheet ( pdf) - motorola, inc description 15 ampere power transistors complementary silicon 60 volts 115 watts 2n3055 datasheet ( html) - motorola, inc 2n3055 product details 15 ampere power transistors complementary silicon 60 volts 115 watts 2n3055 ( npn) mj2955 ( pnp) designed for general– purpose switching and amplifier applications. npn transistor pdf for powerful af output stage. figure 1.
manufacturer: mospec semiconductor. 1. preferred device complementary silicon power transistors complementary silicon power transistors are designed for general− purpose switching and amplifier applications. . [ 1] its numbering follows the jedec standard. c. 1 vdc ( max) @ ic = 4 adc.
it is intended for power switching circuits, series and shunt regulators, output stages, 2n3055 pdf and high fidelity amplifiers. 1 vdc ( max) @ ic. 1 v vce( sat) - 2 collector- emittersaturationvoltage ic= 10a; ib= 3. g4 = e0 as defined in j- std- 609 2nd level interconnect category. . 1 vdc ( max) @ ic = 4 adc excellent safe operating area pb− free package is available maximum ratings. . page: 4 pages.
2n3055 npn silicon power transistor • maximum ratings riling ^ collmtor- emlimr voltao» collactor- emlttw voltag* combctor- baie voltage emitter- bate votteg* collector currbnt - contlnuoui beie current — contlnuoui pdf tol» l device dissipation $ tc - 25° c d« rat« abova 25° c operating and storage junction temperature range symbol vceo vcer vcb. dc current gain − h fe = 20− 70 @ i c = 4 adc collector− emitter saturation voltage − vce( sat) = 1. requiring higher safe operating area than the 2n3055 and mj2955. complementary npn- pnp devices description the 2n3055 is a silicon epitaxial- base planar npn transistor mounted in jedec to- 3 metal case. current gain the 2n3055 is a silicon npn power transistor intended for general purpose applications.
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